| PART |
Description |
Maker |
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| A3G18H500-04S A3G18H500-04SR3 |
RF Power GaN Transistor
|
NXP Semiconductors
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CFG40006S-AMP1 |
6 W, RF Power GaN HEMT, Plastic
|
Cree, Inc
|
| CMPA1C1D060D |
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| RF3932 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| CMPA1D1E030D |
30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
|
